By J.P. Hirth and L. Kubin (Eds.)

New fabrics addressed for the 1st time contain the chapters on minerals by way of Barber et al and the bankruptcy on dislocations in colloidal crystals by means of Schall and Spaepen. Moriarty et al expand the 1st ideas calculations of kink configurations in bcc metals to excessive pressures, together with using versatile boundary stipulations to version dilatational results. Rabier et al make clear the problem of glide-shuffle slip platforms in diamond cubic and similar III-V compounds. Metadislocations, mentioned via Feuerbacher and Heggen, characterize a brand new form of disorder in multicomponent steel compounds and alloys.

  • Kink mechanisms for dislocation movement at excessive strain in bcc metals
  • Dislocation center constructions pointed out in silicon at excessive stress
  • Metadislocations, a brand new form of illness, pointed out and described
  • Extension of dislocation strategies to complicated minerals
  • First observations of dislocations in colloidal crystals

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H. S. Fisher, J. Phys. F: Met. Phys. 9 (1979) 773. L. Farber, M. Krisch, D. Antonangeli, A. Beraud, J. Badro, F. Occelli, D. Orlikowski, Phys. Rev. Lett. 96 (2006) 115502. C. Wallace, Thermodynamics of Crystals, Wiley, New York, 1972. Our present elastic moduli Cij are the stress–strain coefficients Bij defined by Wallace. T. Paxton, P. Gumbsch, M. Methfessel, Philos. Mag. Lett. 63 (1991) 267. W. R. Krenn, D. L. E. Turchi, A. ), Phase Transformations and Evolution in Materials, TMS, Warrendale, PA, 2000, p.

For comparison we also show in Fig. 29 ambient pressure and temperature experimental data for the resolved yield stress in Mo from the Seeger group in Germany [70,71] and from the Aono group in Japan [79]. We note, however, that these data were measured at quasi-static strain rates as opposed to the 1 sÀ1 strain rate in our simulations. Since the resolved shear stress value is expected to decrease with decreasing strain rate, the data should be lower in magnitude than the simulation, which they are.

2. 3. 3. 4. Nucleation of non-dissociated dislocations 93 4. 1. 1. 2. 2. Transition between two regimes: a core structure transformation? 3. Are non-dissociated dislocations in the glide or the shuffle set? 4. 5. 6. Concluding remarks 104 References 104 1. Introduction The study of dislocations in semiconductors is strongly connected to the advent and development of the electronics industry. Indeed, it was very soon observed that the presence of crystalline defects, including dislocations, was detrimental to the processing and service life of devices.

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